High Voltage Gaas Photovoltaic Laser Power Converters

Experiment results under 808 nm laser power beaming show that high optical to electrical conversion efficiency of 53 23 at 5 w cm 2 is achieved using the optimized gaas pv laser converter.

High voltage gaas photovoltaic laser power converters. Six junction vertically stacked gaas laser power converters lpcs with n gaas p al 0 37 ga 0 63 as tunnel junctions have been designed and grown by metal organic chemical vapor deposition for converting the power of 808 nm lasers. For a laser power converter based on gaas which was prepared by thin film technology with a back surface mirror we achieved an opto electric conversion efficiency of 67 3 measured with a laser wavelength of 860 nm at an irradiance of 9 6 w cm. The lpc chips are characterized by measuring current voltage i v characteristics under 808 nm laser illumination and a maximum conversion efficiency η c. The operating voltage at the maximum power point is 5 5 6 0 v depending on the incident laser power and an output electrical power output of 1 3 w can be extracted at a laser power of 2 9 w.

Aside from the use of a dc dc converter in combination with a single pv converter it is possible to boost the voltage by the monolithic serial interconnection of several converter segments on a single chip. Finally accurate extraction of the key parameters viz. The ideality factor reverse saturation current series resistance and shunt resistance is introduced. Aside from the use of a dc dc converter in combination with a single pv converter it is possible to boost the voltage by the monolithic serial interconnection of.

The main drawback of photovoltaic pv laser power converters based on gaas material is the low output voltage which is often insufficient to power electronic circuits directly. The incorporation of a lateral conduction layer lcl on top of the window layer resulted in a considerable gain in efficiency at high illumination levels.